Dr. Ala Cojocaru

Bülowstr. 13, 24105 Kiel, Germany
Tel.: 0431 880 6180 (office)
e-mail: This email address is being protected from spambots. You need JavaScript enabled to view it.

Birth Date
The 22th of Januar 1974
Place of birth
Criuleni, Moldova
Citizenship
Moldavian

Work experience

From 06/2008
Visiting scientist at Christian-Albrecht-University of Kiel
10/2007 - 05/2008
Fellowship at Christian-Albrecht-University of Kiel sponsored by Alexander von Humboldt Foundation:
11/1996 -09/2006
Scientific collaborator at the Institute of Applied Physics of Academy of Science of Moldova, the Laboratory “Materials and Structures for Solar Energy”
09/1996 - 09/2006
Patent examiner, Mechanics and Electricity Division, Inventions Department, State Agency on Intellectual Property of the Republic of Moldova

Education

11/2000 – 12/2003
PhD at the Institute of Applied Physics, Moldavian Academy of Science;
Thesis: The study of the electrolyte – semiconductor interface on the basis ofZnIn2S4, GaAs, and InP compounds.
03/1996 – 07/1996
Diploma Thesis at the Chair Semiconductors Physics: The investigation of electrical and photoelectrical properties of the heterojunction on the basis of CdS-CdTe.
09/1991 – 07/1996
Study of Physics at the Faculty of Physics, State University of Moldova

Trainings

05/2006
European Patent Academy Seminar OS09-2006 “Management of patent documentation and classification” held in European Patent Office, The Hague, The Netherlands, 8-12 May, 2006
10/2003
7th session of the scientific-practical Conference „Theory and practice of intellectual property protection in Russian Federation from the perspective of the amended legislation”, organized by the Russian Agency for Patents and Trademarks.
03/2003 – 04/2003
Distance learning course on Intellectual Property, WIPO Worldwide Academy.
04/2002 – 04/2003
Scholarship Programme sponsored by World Federation of Scientists in Lausanne, “Renewable energy sources: Physical processes at electrolyte-nanoporous A3B5 semiconductor interface”, CH-1003, Lausanne, Switzerland
11/2002
European Patent Office (EPO) International Academy Seminars “Patents in electronics, computer technology and  telecommunications” and International Forum on protection of computer - “Related and business model inventions”, Munich, Germany
03/1998 – 04/1998
Courses for Counsellor in Industrial Property, State Office for Inventions and Trademarks of  Romania;
11/1997 - 02/1998
Courses for Counsellor in Industrial Property, State Agency on Industrial Property Protection of the Republic of Moldova (AGEPI);

Organizational skills

03/2007 – 05/2008
Joint coordination of the EU/INTAS – Moldova Joint Project: “THz sources and components based on Porous Materials.”
09/2001 – 05/2003
Joint coordination of the project “The investigation of electrical and photoelectrical properties of electrolyte–semiconductor interface to elaborate a photoelectrochemical cell”, supported by the Supreme Council of Science and Technological Development of Moldova.

Practical experience

Material analysis
Scanning Electron Microscopy;
Energy Dispersive X-Ray Spectroscopy;
Fourier Transformed Infrared Spectroscopy.
In-situ electrochemical analysis
In-Situ Fast Fourier Transformed Impedance Spectroscopy;
In-Situ Photo Impedance Spectroscopy.
Large scale electrochemistry
Etching of Silicon and III-V (n- and p-type).

Computer skills
Image processors and others
CorelDraw, Adobe Photoshop, Microcal Origin, Microsoft Office

Awards

1999 Prize of the “The outstanding examiner - 1998”, AGEPI, Chisinau, Republic of Moldova;
2002 Prize of the International Exposition “Infoinvent - 2002”, Chisinau, Republic of Moldova;
2003 Prize of the Academy of Sciences of Moldova for the cycle of scientific works “The study of the electrolyte – semiconductor interface on the basis of ZnIn2S4, GaAs, and InP compounds”.

Languages

Romanian - mother tongue
German - basics
English - fluent
Russian - fluent

Hobbys

Music, Travelling, Photography.

Kiel, the 22th of July, 2009

List of main publications:

[1] H. Föll, M.-D. Gerngroß, A. Cojocaru, M. Leisner, J. Bahr, and J. Carstensen, "Production of high aspect ratio single holes in semiconductors", ECS Trans. 19(3), 347 (2009).

[2] J. Carstensen, A. Cojocaru, M. Leisner, and H. Föll, "Dynamics of macropore growth in n-type silicon investigated by FFT in-situ impedance analysis ", ECS Trans. 19(3), 355 (2009).

[3] J. Carstensen, H. Föll, A. Cojocaru, and M. Leisner, "In-situ FFT impedance spectroscopy in new modes applied to pore growth in semiconductors", Phys. Stat. Sol. (c) 6(7), 1629 (2009).

[4] A. Cojocaru, J. Carstensen, M. Leisner, H. Föll, and I.M. Tiginyanu, "Self-induced oscillation of the macropore diameter in n-type silicon", Phys. Stat. Sol. (c) 6(7), 1533 (2009).

[5] A. Cojocaru, J. Carstensen, E.K. Ossei-Wusu, M. Leisner, O. Riemenschneider, and H. Föll, "Fast macropore growth in n-type silicon", Phys. Stat. Sol. (c) 6(7), 1571 (2009).

[6] M. Leisner, J. Carstensen, A. Cojocaru, and H. Föll, "Pore growth on n-InP investigated by in situ FFT impedance spectroscopy", Phys. Stat. Sol. (c) 6(7), 1566 (2009).

[7] J. Carstensen, E. Foca, S. Keipert, H. Föll, M. Leisner, and A. Cojocaru, "New modes of FFT impedance spectroscopy applied to semiconductor pore etching and materials characterization", Phys. Stat. Sol. (a) 205(11), 2485 (2008).

[8] M. Leisner, J. Carstensen, A. Cojocaru, and H. Föll, "In-situ FFT impedance spectroscopy during the growth of crystallographically oriented pores in InP", ECS Trans. 16(3), 133 (2008).

[9] A. Cojocaru, J. Carstensen, and H. Föll, "Growth modes of macropores in n-type silicon", ECS Trans. 16(3), 157 (2008).

[10] E.K. Ossei-Wusu, A. Cojocaru, J. Carstensen, M. Leisner, and H. Föll, "Etching deep macropores in n-type silicon in short times", ECS Trans. 16(3), 109 (2008).

[11] J. Carstensen, A. Cojocaru, M. Leisner, and H. Föll, "In-situ assessment of macropore growth in low-doped n-type silicon", ECS Trans. 16(3), 21 (2008).

[12] A. Cojocaru, E. Foca, J. Carstensen, M. Leisner, I.M. Tiginyanu, and H. Föll, “Impedance spectroscopy as a powerful tool for better understanding and controlling the pore growth mechanism in semiconductors” in Proceedings of the 5th international conference on "Microelectronics and computer science" (Volume 1), 133, Technical University of Moldova, Chisinau (2007).

[13] C. Diaz-Guerra, J. Piqueras, V. Popa, A. Cojocaru, I. M. Tiginyanu. “Spatially resolved cathodoluminescence on GaN nanostructures fabricated by photoelectrochemical etching. Applied Physics Letters Vol. 86, 223103, (2005).

[14] A. Cojocaru, A. Simashkevich, D. Sherban, I. Tiginyanu, V. Ursaki, I. Tsiulyanu, I. Usatyi: “Use of porous GaAs electrodes in photoelectrochemical cells.” Phys. Stat. Sol. (a), Volume 202, Issue 8, Pages 1678-1682, (2005).

Participation at the international Conferences:

[1] H. Föll, M.-D. Gerngroß, A. Cojocaru, M. Leisner, J. Bahr, and J. Carstensen, "Production of high aspect ratio single holes in semiconductors", Joint the 200th Meeting of The Electrochemical Society, San Francisco, California (2009) (oral presentation)

[2] J. Carstensen, A. Cojocaru, M. Leisner, and H. Föll, "Dynamics of macropore growth in n-type silicon investigated by FFT in-situ impedance analysis ", Joint the 200th Meeting of The Electrochemical Society, San Francisco, California (2009) (oral presentation)

[3] A. Cojocaru, J. Carstensen, and H. Föll, "Growth modes of macropores in n-type silicon", Joint International Meeting PRiME 2008, Honolulu, Hawaii (2008) (oral presentation)

[4] E.K. Ossei-Wusu, A. Cojocaru, J. Carstensen, M. Leisner, and H. Föll, "Etching deep macropores in n-type silicon in short times", Joint International Meeting PRiME 2008, Honolulu, Hawaii (2008) (oral presentation)

[5] A. Cojocaru, J. Carstensen, M. Leisner, H. Föll, and I.M. Tiginyanu, "Self-induced oscillation of the macropore diameter in n-type silicon", International Conference on Porous Semiconductors: Science and Technology, Mallorca, Spain (2008) (oral presentation)

[6] A. Cojocaru, J. Carstensen, M. Leisner, E.K. Ossei-Wusu, O. Riemenschneider, and H. Föll, "Fast

macropore growth in n-type silicon", International Conference on Porous Semiconductors: Science and Technology, Mallorca, Spain (2008) (poster)