Olesea Volciuc

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Date of Birth:          16/11/1980
Place of Birth:        Chisinau, Republic of Moldova
Nationality:              Republic of Moldova


August 2003 – 2011  Research assistant. Technical University of Moldova, Chisinau, Moldova, National Center for Materials Study and Testing.
September 1998  Technical University of Moldova, Chisinau, Moldova
July  2003   Electrical engineer. Department of Solid State Device Physics. Specialization – Microelectronics

Education abroad

February         2010    Department of High Frequency Electronics
November       2009    Technical University Darmstadt, Germany
May                2009     Technical University Darmstadt, Germany
August            2009    Department of High Frequency Electronics
August            2008             Technical University Darmstadt, Germany
December       2008              Department of High Frequency Electronics
July                  2007             Technical University Darmstadt, Germany
January           2008              Department of High Frequency Electronics
July                  2006             Joint Institute for Nuclear Research (JINR), Dubna, Russia
September        2006              Flerov Laboratory for Nuclear Research
July                  2005              National Institute for Research and Development
August             2005             in Microtechnologies, Bucharest, Romania


Language Skills

English                      good                         
German                     basic skills
Russian                     native speaker
Romanian                  native speaker

Honours, Awards

2008- 2010
·        NATO SCIENCE FOR PEACE AND SECURITY PROGRAMME, Reintegration grant “Development of selective gas sensor with high radiation hardness”
* “The German Academic Exchange Service” (DAAD) for “Development of selective gas sensors based on gallium nitride” the Technical University of Darmstadt, Germany
* National Scholarship Program winner awarded by The World Federation of Scientists  for “Ultra high efficiency polymer light-emitting diode”
* Award for Young’s in the fields of Science and Engineering for “The study of nanostructured materials and electronic devices elaborated on the bases of semiconductor compounds” awarded by the Government of the Republic of Moldova
* “2006 Laureate in the field of Technical Creativity” awarded by the Technical University of Moldova
* Gold Medal winner at the “International Salon for Inventions” for “Technological approaches for the fabrication of porous semiconductor structures”, Brussels 2005
* Gold Medal winner at the International Exhibition “Info Invent 2005“ for “Selective sensor for methane leakage detection”, November 10-13, Chisinau, Moldova
* “Sergiu Rădăuţeanu” Scholarship awarded by The Technical University of Moldova
·        Silver Medal winner at the AGEPI exhibition “Info Invent” 2004 for “Methods for fabrication of porous semiconductor structures” November 10-13, Chisinau, Moldova


1. The impact of high energy ion irradiation upon CO gas sensitivity of nanostructured GaN epilayers
O. Volciuc, V. Popa , I. M. Tiginyanu, V. A. Skuratov, M.Cho, D. Pavlidis
10th Int. Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies, EXMATEC 2010, p. 115-116. Darmstadt, Germany, May 21st, (2010)

2. The impact of high energy heavy ion irradiation upon gas sensors based on nanostructured GaN epilayers
Volciuc Olesea
3rd Int. Conf. “Telecommunications, Electronics and Informatics”, p. 302-305 Chisinau, Moldova, May 23rd, (2010)

3. GaN nanostructures as gas sensors
Volciuc Olesea
6th International Conference on Microelectronics and Computer Science, pp 194-196
Chisinau, Moldova, October 1-3, (2009)

4. New techniques for the fabrication of GaN based nanowalls and nanomembranes
Popa V., Volciuc O., Tiginyanu I., Sarua A., Kuball M., Heard P., Cho E., Pavlidis D
Int. Symposium “Humboldt Kolleg & Nano-2009”,V.1, pp 41 Chisinau,Moldova, Sept. 17-20, (2009)

5. Surface charge lithography for GaN micro- and nanostructuring
I. M. Tiginyanu, V. Popa, A. Saruac, P. J. Heard, O. Volciuca, M. Kuball
The International Conference on Gallium Nitride and Devices within the SPIE Photonics West Meeting held on January 24-29, (2009) in San Jose, California, USA; SPIE Paper Number 7216-34.

6.   Fabrication of GaN nanowalls and nanowires using surface charge lithography
V. Popa, I. Tiginyanu, O. Volciuc, A. Sarua, M. Kuball, P. Heard
Materials Letters, Vol. 62, p. 4576 – 4578, (2008)

7.   Application of Surface Charge Lithography to Nanostructuring of GaN Epilayers
V. Iu. Popa, O. Volciuc, I. M. Tiginyanu, A. Sarua and P. Heard    
Surface Engineering and Applied Electrochemistry, Vol. 44, No. 1, pp. 6–8 (2008)

8.   Nanostructuring induced enhancement of radiation hardness in GaN epilayers.
V.V. Ursaki, I.M. Tiginyanu, O. Volciuc, V. Popa, V. A. Skuratov, H. Morkoç
Appl. Phys. Lett., 90, 161908 (2007)

4.   GaN based two-sensor array for methane detection in ethanol environment
V. Popa, I.M. Tiginyanu, V.V. Ursaki, O. Volciuc, and H. Morkoc.
Semiconductor Science and Technology 21, pp. 1518-1521 (2006)

9.   Cathodoluminescence microscopy and spectroscopy of GaN epilayers microstructured using surface charge lithography
C. Diaz-Guerra, J. Piqueras, O. Volciuc, V. Popa, and I.M. Tiginyanu.
Journal of Applied Physics, 100, 023509 (2006)

10.   Cathodoluminescence microscopy and spectroscopy of GaN epilayers microstructured using surface charge lithography
C. Diaz-Guerra, J. Piqueras, O. Volciuc, V. Popa, I.M. Tiginyanu.
In: 5th Int. Conf. „Porous Semiconductors: Science and Technology“, Sitges-Barcelona, Spain, March, 12-17, 2006 (Abstract Booklet, Paper P1-33).

11.   Surface-charge lithography for GaN microstructuring based on photoelectrochemical etching techniques
I.M. Tiginyanu, V. Popa, O. Volciuc;
Appl. Phys. Lett., 86, 174102 (2005)

12.   Mechanisms of enhancement of nonlinear optical response in nanostructured  III-V compounds
V.Sergentu, I.Kravetsky, V.Ursaki, L.Sirbu, V.Popa, O.Volciuc, I.M.Tiginyanu, Robert W. Boyd; Proc. 4th Int. Conf. on “Microelectronics and Computer Science”, V.1, pp. 267-271 (Elan Poligraf, 2005). Chisinau, Moldova., September, 15-17, 2005.

13.   Hydrogen detector based on GaN nanocones
V.Popa, O.Volciuc, V.Sontea, I.M.Tiginyanu Proc. 4th Int. Conf. on “Microelectronics and Computer Science”, Vol. 1, pp. 297-299 (Chisinau: Elan Poligraf, 2005). Chisinau, Moldova, Sept. 15-17, (2005)

14.  Design of trapped surface charge for the photoelectrochemical fabrication of GaN mesostructures
V. Popa, O. Volciuc, I.M. Tiginyanu; Physica Status Solidi 201/14, pp.111-113 (2004)

15.  Photoelectrochemical etching of GaN as a tool for smooth etching and    formation of pores and wires
I.Tiginyanu, V. Popa, O. Volciuc, O. Cojocari, V. Ursaki, D. Pavlidis, H. Hartnagel; Oral presentation at the 2004 MRS Fall Meeting, Boston, Massachusetts, (2004)

16.  Morphology study and cathodoluminescence microanalysis of photoelectrochemically etched GaN epilayers
V. Popa, I.M. Tiginyanu, O. Volciuc, M.A. Stevens-Kalceff, D. Pavlidis; Pres. at the 10th International Conference “Defects - Recognition, Imaging and Physics in Semiconductors”, Batz sur Mer, France, Sept. 29 – Oct. 2, (2003)