Veaceslav Popa
Dr. Eng.

National Center for Materials Study and Testing,
Technical University of Moldova, Chisinau MD-2004, Moldova
E-mail: This email address is being protected from spambots. You need JavaScript enabled to view it.

Date of Birth: January 06, 1980
Place of Birth: Orhei, Republic of Moldova
Nationality: Republic of Moldova


- Technical University of Moldova, M.Sc. in Microelectronics, June 2001
- Institute of Applied Physics of the Academy of Sciences of Moldova, Dr. in Engineering, December 2005
- Alexander von Humboldt post-doctoral research fellow, April 2009 -
April 2011


- Award for Young’s in the fields of Science and Engineering for “The study of nanostructured materials and electronic devices elaborated on the bases of semiconductor compounds” presentation, offered by the Government of the Republic of Moldova for 2006
- Salon International des Inventions, Geneve 2006, une medaille d’argent pour l’invention “Sélecteur pour détecter le manqué de méthane”
- 54th World Exhibition of Innovation, Reasearch and new Technology, EUREKA 2005, Brussels, Gold Medal for “Technological approaches for the fabrication of porous semiconductor structures”
- Gold Medal for “ Technology for Manufacturing Semiconductor Nanostructures ” at INPEX 2005, Pittsburg, PA USA.
- Salon International des Inventions, Geneve 2005, une medaille d’argent pour l’invention “Technologie pour la fabrication de nanostructures semiconductrices”
- AGEPI exhibition “Info Invent” 2005, Moldova, Gold Medal for “Selective methane leakage detector” presentation.
- AGEPI exhibition “Info Invent” 2005, Moldova, Silver Medal for “Development of the technologies for obtaining semiconductor nanostructures for nanofabrication” presentation.
- AGEPI exhibition “Info Invent” 2004, Moldova, Gold Medal for “Technology for fabrication of semiconductor nanostructures” presentation.
- AGEPI exhibition “Info Invent” 2004, Moldova, Silver Medal for “Methods for fabrication of porous semiconductor structures” presentation.
- Selected as the “Best Ph.D Student of the year 2004”.
- Selected as the “Best Student of the Technical University of Moldova” for the years 1999/2000.

Research interests

Solid-State Electronics, nanotechnology, semiconductor-based gas sensors and biosensors.

List of publications:

1. The impact of high energy ion irradiation upon CO gas sensitivity of nanostructured GaN epilayers
Volciuc O., Popa V., I.M. Tiginyanu and others.
EXMATEC 2010, 19-21 May 2010, V.1, p.115

2. New techniques for the fabrication of GaN based nanowalls and nanomembranes Popa V., Volciuc O., Tiginyanu I. and others.
International Symposium “Humboldt Kolleg & Nano-2009” held in Moldova, Sept. 17-20, 2009, V.1, p. 41.

3. Surface charge lithography for GaN micro- and nanostructuring
Tiginyanu I., Popa V., Volciuc O. and others
The International Conference on “Gallium Nitride and Devices within the SPIE Photonics West Meeting” USA, California, January 24-29, 2009, p. 7216-34.

4. Fabrication of GaN nanowalls and nanowires using surface charge lithography
V. Popa, I. Tiginyanu, O. Volciuc, A. Sarua, M. Kuball, P. Heard
Materials Letters, Vol 62, Issue 30, pp.4576-4578, (2008)

5. New technologies for semiconductors nanostructuring for electronic devices
V.Popa, O.Volciuc
Akademos, Nr.4, pp. 84-85, (2008)

6. Application of Surface Charge Lithography to Nanostructuring of GaN Epilayers
V. Iu. Popa, O. Volciuc, I. M. Tiginyanu, A. Sarua and P. Heard
Surface Engineering and Applied Electrochemistry, Vol. 44, No. 1, pp. 6–8, (2008)

7. Nanostructuring induced enhancement of radiation hardness in GaN epilayers
V.V. Ursaki, I.M. Tiginyanu, O. Volciuc, V. Popa, V. A. Skuratov and H. Morkoç
Applied Physics Letters 90, 161908 (2007)

8. GaN based two-sensor array for methane detection in ethanol environment.
V. Popa, I.M. Tiginyanu, V.V. Ursaki, O. Volciuc, and H. Morkoc.
Semiconductor Science and Technology 21, p. 1518-1521 (2006)

9. Cathodoluminescence microscopy and spectroscopy of GaN epilayers microstructured using surface charge lithography.
C. Diaz-Guerra, J. Piqueras, O. Volciuc, V. Popa, and I.M. Tiginyanu.
Journal of Applied Physics, Vol. 100, 023509 (2006)

10. Spatially resolved cathodoluminescence of GaN nanostructures fabricated by photoelectrochemical etching
C. Diaz-Guerra, J. Piqueras, V. Popa, A. Cojocaru, and I.M. Tiginyanu
Applied Physics Letters 86, 223103 (2005)

11. Surface-charge lithography for GaN microstructuring based on photoelectrochemical etching techniques
I.M. Tiginyanu, V. Popa and O. Volciuc
Applied Physics Letters 86, 174102 (2005)

12. The photoelectrochemical etching as a tool for gas sensor fabrication
Электронная обработка материалов, vol.4, p.7-10 (2005)

13. Morphology study and cathodoluminescence microanalysis of photoelectrochemicaly etched GaN epilayers
V. Popa,
Moldavian Journal of the Physical Sciences N1, p. 120-123 (2005)

14. Hydrogen detector based on GaN nanocones
V.Popa, O.Volciuc, V.Sontea, I.M.Tiginyanu
Proc. 4th Int. Conf. on “Microelectronics and Computer Science”, Vol. 1, p. 297-299 (Chisinau: Elan Poligraf, 2005). Chisinau, Moldova, Sept. 15-17, 2005.

15. Design of trapped surface charge for the photoelectrochemical fabrication of GaN mesostructures
V. Popa, O. Volciuc and I.M. Tiginyanu
Physica Status Solidi, p. R111-R113, pss(a) 201/14 (2004)

16. GaN Schottky multiplier diodes prepared by electroplating: study of passivation technology
O. Cojocari, V. Popa, V.V. Ursaki, I.M. Tiginyanu, H.L. Hartnagel and I. Daumiller.
Semiconductor Science and Technology, vol 19, p. 1273-1279 (2004)

17. Free excitons in strained MOCVD-grown GaN layers
N.N. Syrbu, I.M. Tiginyanu, V.V. Ursaki, V.V. Zalamai, V. Popa, S.M. Hubbard and D. Pavlidis.
MRS Internet Journal of Nitride Semiconductor Research, Vol. 8, Article 1 (2003)

18. GaN – New material for gas sensor applications
V. Popa, G. Korotchenkov, I.M. Tiginyanu, V. Brynzari, E. Monaico, S.M. Hubbard   and  D. Pavlidis
Proc. 3rd Int. Conf. on “Microelectronics and Computer Science”, Vol. 1,p. 182-185 (Elan Poligraf, 2002). Chisinau, Moldova, Sept. 26-28, 2002